Photocarrier escape time in quantum-well light-absorbing devices: Effects of electric field and well parameters

We analyze the dependence of the carrier escape time from a single-quantum-well optoelectronic device on the aplied electric field and well width and depth. For this purpose, a new simple and computationally efficient theory is developed. This theory is accurate in the case of electrons, and the assessment of the applicability for holes is given. Semi-analytical expressions for the,escape times are derived. Calculations are compared to experimental results and previous numerical simulations. Significant correlations between the Position,of quantum-well energy levels and the value of the escape time are found. the main escape mechanism At room temperature is established to be thermally assisted tunneling/emission through near-barrier-edge states. The formation of a new eigenstate in the near-barrier-edge energy region is found to reduce the electron escape time significantly, which can be used for practical device optimization

Quantum-well design for monolithic optical devices with gain and saturable absorber sections

We propose a new design of semiconductor quantum-well heterostructures, which can be used to improve the performance of monolithic mode-locked diode lasers and all-optical signal-processing devices with gain and saturable absorber sections. Numerical modeling shows that this design can increase the carrier sweep-out rate from the absorber section by several orders of magnitude, while retaining high carrier confinement on the ground level making for efficient signal amplification by the gain sections

The Role of Constraints in a Segregation Model: The Symmetric Case

In this paper we study the effects of constraints on the dynamics of an adaptive segregation model introduced by Bischi and Merlone (2011). The model is described by a two dimensional piecewise smooth dynamical system in discrete time. It models the dynamics of entry and exit of two populations into a system, whose members have a limited tolerance about the presence of individuals of the other group. The constraints are given by the upper limits for the number of individuals of a population that are allowed to enter the system. They represent possible exogenous controls imposed by an authority in order to regulate the system. Using analytical, geometric and numerical methods, we investigate the border collision bifurcations generated by these constraints assuming that the two groups have similar characteristics and have the same level of tolerance toward the members of the other group. We also discuss the policy implications of the constraints to avoid segregation

High-field electron transport in doped ZnO

Current-voltage characteristics have been measured for ZnO:Ga and Zn:Sb epitaxial layers with electron densities ranging from 1.4x10(17) cm(-3) to 1.1 x 10(20) cm(-3). Two-terminal samples with coplanar electrodes demonstrate virtually ohmic behavior until thermal effects come into play. Soft damage of the samples takes place at high currents. The threshold power (per electron) for the damage is nearly inversely proportional to the electron density over a wide range of electron densities. Pulsed voltage is applied in order to minimize the thermal effects, and thus an average electric field of 150 kV cm(-1) is reached in some samples subjected to 2 ns voltage pulses. The results are treated in terms of electron drift velocity estimated from the data on current and electron density under the assumption of uniform electric field. The highest velocity of similar to 1.5 x 10(7) cm s(-1) is found at an electric field of similar to 100 kV cm(-1) for the sample with an electron density of 1.4 x 10(17) cm(-3). The nonohmic behavior due to hot-electron effects is weak, and the dependence of the electron drift velocity on the doping resembles the variation of mobility

Enhancement of the Curie temperature in GaMnAs/InGaMnAs superlattices

We report on an enhancement of the Curie temperature in GaMnAs/InGaMnAs superlattices grown by low-temperature molecular beam epitaxy, which is due to thin InGaMnAs or InGaAs films embedded into the GaMnAs layers. The pronounced increase of the Curie temperature is strongly correlated to the In concentration in the embedded layers. Curie temperatures up to 110 K are observed in such structures compared to 60 K in GaMnAs single layers grown under the same conditions. A further increase in T$_C$ up to 130 K can be achieved using post-growth annealing at temperatures near the growth temperature. Pronounced thickness fringes in the high resolution X-ray diffraction spectra indicate good crystalline quality and sharp interfaces in the structures.Comment: 4 pages, 4 figures, submitted to Appl. Phys. Let

Strongly Localized State of a Photon at the Intersection of the Phase Slips in 2D Photonic Crystal with Low Contrast of Dielectric Constant

Two-dimensional photonic crystal with a rectangular symmetry and low contrast (< 1) of the dielectric constant is considered. We demonstrate that, despite the {\em absence} of a bandgap, strong localization of a photon can be achieved for certain ``magic'' geometries of a unit cell by introducing two $\pi/2$ phase slips along the major axes. Long-living photon mode is bound to the intersection of the phase slips. We calculate analytically the lifetime of this mode for the simplest geometry -- a square lattice of cylinders of a radius, $r$. We find the magic radius, $r_c$, of a cylinder to be 43.10 percent of the lattice constant. For this value of $r$, the quality factor of the bound mode exceeds $10^6$. Small ($\sim 1$) deviation of $r$ from $r_c$ results in a drastic damping of the bound mode.Comment: 6 pages, 2 figure

Period adding structure in a 2D discontinuous model of economic growth

We study the dynamics of a growth model formulated in the tradition of Kaldor and Pasinetti where the accumulation of the ratio capital/workers is regulated by a two-dimensional discontinuous map with triangular structure. We determine analytically the border collision bifurcation boundaries of periodicity regions related to attracting cycles, showing that in a two-dimensional parameter plane these regions are organized in the period adding structure. We show that the cascade of flip bifurcations in the base one-dimensional map corresponds for the two-dimensional map to a sequence of pitchfork and flip bifurcations for cycles of even and odd periods, respectively